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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 6 0.2 MAX. 1500 800 10 25 125 5.0 0.35 UNIT V V A A W V A s
Tmb 25 C IC = 6.0 A; IB = 1.2 A ICsat = 6.0 A; IB(end) = 0.85 A
PINNING - SOT429
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
SYMBOL
c b
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 10 25 6 9 150 6 125 150 150 UNIT V V A A A A mA A W C C
average over any 20 ms period Tmb 25 C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W
1 Turn-off current.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AW
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 6.0 A; IB = 1.2 A IC = 6.0 A; IB = 1.2 A IC = 100 mA; VCE = 5 V IC = 6 A; VCE = 5 V
MIN. 7.5 800 5
TYP. 13.5 13 7
MAX. 1.0 2.0 1.0 5.0 1.1 9.5
UNIT mA mA mA V V V V
Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (32 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time Switching times (16 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 6.0 A; LC = 330 H; Cfb = 9 nF; IB(end) = 0.85 A; LB = 3.45 H; -VBB = 4 V; (-dIB/dt = 1.2 A/s) ICsat = 6.0 A; LC = 650 H; Cfb = 19 nF; IB(end) = 1.0 A; LB = 5.3 H; -VBB = 4 V; (-dIB/dt = 0.8 A / s) 4.5 0.35 5.5 0.5 s s TYP. 115 MAX. UNIT pF
3.0 0.2
4.0 0.35
s s
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AW
+ 50v 100-200R
IC
TRANSISTOR DIODE
ICsat
t
IB
IBend t
Horizontal Oscilloscope Vertical
32us 10us 13us
100R 6V 30-60 Hz
1R
VCE
t
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times waveforms (32 kHz).
IC / mA
ICsat 90 % IC
250
10 %
200
ts IB
tf
t
100
IBend
t
0 VCE / V min VCEOsust
- IBM
Fig.2. Oscilloscope display for VCEOsust.
Fig.5. Switching times definitions.
TRANSISTOR IC DIODE
ICsat
+ 150 v nominal adjust for ICsat
t
Lc
IB IBend t 20us 26us
IBend
64us VCE
LB
T.U.T. Cfb
-VBB
t
Fig.3. Switching times waveforms (16 kHz).
Fig.6. Switching times test circuit (BU2520A).
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AW
100
hFE
BU2520A
Tj = 25 C
1.2 1.1 1
VBESAT / V
Tj = 25 C Tj = 125 C
BU2520A
5V
Tj = 125 C
10 1V
0.9 IC= 0.8 0.7 8A 6A 5A 4A 0 1 2 IB / A 3 4
1
0.1
1 IC / A
10
0.6
100
Fig.7. Typical DC current gain. hFE = f (IC) parameter VCE
VBESAT / V
Tj = 25 C Tj = 125 C
Fig.10. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
VCESAT / V BU2520A
Tj = 25 C Tj = 125 C
1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4
BU2520A
10
8A
1 IC/IB= 3 4 5 0.1 0.1 1 IC / A 10 0.1 1 IB / A 10 5A IC = 4 A
6A
Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB
Fig.11. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
Eoff / uJ BU2520A
1 0.9 0.8 0.7 0.6 0.5
VCESAT / V IC/IB = 5 4 3
BU2520A
1000
32 kHz IC = 6 A 16 kHz 100
Tj = 25 C
5A
0.4 0.3 0.2 0.1 0 0.1
Tj = 125 C
10
1 IC / A 10 100
0.1
1 IB / A
10
Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
Fig.12. Typical turn-off losses. Tj = 85C Eoff = f (IB); parameter IC; parameter frequency
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AW
12 11 10 9 8 7 6 5 4 3 2 1 0
ts, tf / us 16 kHz
BU2520A ts
10
Zth / (K/W)
1 0.5 0.1
IC = 6A
0.2 0.1 0.05 0.02
P D tp D= tp T t
0.01
5A tf 0.1 1 IB / A 10
D=0 0.001 1E-06
T
1E-04
1E-02 t/s
1E+00
Fig.13. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 16 kHz
Fig.16. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
12 11 10 9 8 7 6 5 4 3 2 1 0
ts, tf / us 32 kHz
BU2520A
IC / A 100
BU2520A
tp =
ts
ICM
= 0.01
30 us
IC = 6A 5A tf 10
ICDC 10 100 us
0.1
1 IB / A
Ptot 1 1 ms
Fig.14. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 32 kHz
Normalised Power Derating
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
0.1 10 ms DC
0.01
0 20 40 60 80 100 Tmb / C 120 140
1
10
100
1000
VCE / V
Fig.15. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb)
Fig.17. Forward bias safe operating area. Tmb = 25 C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature.
September 1997
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AW
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 o 3.5 max
2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M
15.5 min
Fig.18. SOT429; pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AW
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1997
7
Rev 1.100

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